American microelectronics data annual. 1964-65 by G. W. A. Dummer, J. Mackenzie Robertson

By G. W. A. Dummer, J. Mackenzie Robertson

American Microelectronics info Annual 1964-65 presents entire details on various microelectronics to be had within the U.S.

summary: American Microelectronics information Annual 1964-65 presents entire details on diversified microelectronics to be had within the U.S

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Electronic circuit analysis and design

Half I Semiconductor units and easy purposes 1 --
Chapter 1 Semiconductor fabrics and Diodes three --
1. 1 Semiconductor fabrics and houses four --
1. 1. 1 Intrinsic Semiconductors four --
1. 1. 2 Extrinsic Semiconductors 7 --
1. 1. three go with the flow and Diffusion Currents nine --
1. 1. four extra providers eleven --
1. 2 The pn Junction 12 --
1. 2. 1 The Equilibrium pn Junction 12 --
1. 2. 2 Reverse-Biased pn Junction 14 --
1. 2. three Forward-Biased pn Junction sixteen --
1. 2. four perfect Current-Voltage dating 17 --
1. 2. five pn Junction Diode 18 --
1. three Diode Circuits: DC research and types 23 --
1. three. 1 generation and Graphical research recommendations 24 --
1. three. 2 Piecewise Linear version 27 --
1. three. three desktop Simulation and research 30 --
1. three. four precis of Diode types 31 --
1. four Diode Circuits: AC similar Circuit 31 --
1. four. 1 Sinusoidal research 31 --
1. four. 2 Small-Signal similar Circuit 35 --
1. five different Diode varieties 35 --
1. five. 1 sunlight mobilephone 35 --
1. five. 2 Photodiode 36 --
1. five. three Light-Emitting Diode 36 --
1. five. four Schottky Barrier Diode 37 --
1. five. five Zener Diode 39 --
Chapter 2 Diode Circuits forty nine --
2. 1 Rectifier Circuits 50 --
2. 1. 1 Half-Wave Rectification 50 --
Problem-Solving approach: Diode Circuits fifty one --
2. 1. 2 Full-Wave Rectification fifty three --
2. 1. three Filters, Ripple Voltage, and Diode present fifty six --
2. 1. four Voltage Doubler Circuit sixty three --
2. 2 Zener Diode Circuits sixty four --
2. 2. 1 excellent Voltage Reference Circuit sixty four --
2. 2. 2 Zener Resistance and percentage rules sixty seven --
2. three Clipper and Clamper Circuits sixty eight --
2. three. 1 Clippers sixty eight --
2. three. 2 Clampers seventy two --
2. four Multiple-Diode Circuits seventy five --
2. four. 1 instance Diode Circuits seventy five --
Problem-Solving procedure: a number of Diode Circuits seventy nine --
2. four. 2 Diode good judgment Circuits eighty --
2. five Photodiode and LED Circuits eighty two --
2. five. 1 Photodiode Circuit eighty two --
2. five. 2 LED Circuit eighty three --
Chapter three The Bipolar Junction Transistor ninety seven --
3. 1 simple Bipolar Junction Transistor ninety seven --
3. 1. 1 Transistor constructions ninety eight --
3. 1. 2 npn Transistor: Forward-Active Mode Operation ninety nine --
3. 1. three pnp Transistor: Forward-Active Mode Operation 104 --
3. 1. four Circuit Symbols and Conventions one zero five --
3. 1. five Current-Voltage features 107 --
3. 1. 6 Nonideal Transistor Leakage Currents and Breakdown Voltage a hundred and ten --
3. 2 DC research of Transistor Circuits 113 --
3. 2. 1 Common-Emitter Circuit 114 --
3. 2. 2 Load Line and Modes of Operation 117 --
Problem-Solving process: Bipolar DC research one hundred twenty --
3. 2. three universal Bipolar Circuits: DC research 121 --
3. three uncomplicated Transistor purposes 131 --
3. three. 1 swap 131 --
3. three. 2 electronic common sense 133 --
3. three. three Amplifier 134 --
3. four Bipolar Transistor Biasing 138 --
3. four. 1 unmarried Base Resistor Biasing 138 --
3. four. 2 Voltage Divider Biasing and Bias balance one hundred forty --
3. four. three built-in Circuit Biasing a hundred forty five --
3. five Multistage Circuits 147 --
Chapter four simple BJT Amplifiers 163 --
4. 1 Analog signs and Linear Amplifiers 163 --
4. 2 The Bipolar Linear Amplifier a hundred sixty five --
4. 2. 1 Graphical research and AC an identical Circuit 166 --
4. 2. 2 Small-Signal Hybrid-[pi] similar Circuit of the Bipolar Transistor one hundred seventy --
Problem-Solving process: Bipolar AC research one hundred seventy five --
4. 2. three Hybrid-[pi] an identical Circuit, together with the Early impact 176 --
4. 2. four extended Hybrid-[pi] an identical Circuit a hundred and eighty --
4. 2. five different Small-Signal Parameters and identical Circuits a hundred and eighty --
4. three simple Transistor Amplifier Configurations 185 --
4. four Common-Emitter Amplifiers 189 --
4. four. 1 uncomplicated Common-Emitter Amplifier Circuit a hundred ninety --
4. four. 2 Circuit with Emitter Resistor 192 --
4. four. three Circuit with Emitter-Bypass Capacitor 196 --
4. four. four complicated Common-Emitter Amplifier options 199 --
4. five AC Load Line research two hundred --
4. five. 1 AC Load Line 2 hundred --
4. five. 2 greatest Symmetrical Swing 203 --
Problem-Solving strategy: greatest Symmetrical Swing 204 --
4. 6 Common-Collector (Emitter-Follower) Amplifier 205 --
4. 6. 1 Small-Signal Voltage achieve 205 --
4. 6. 2 enter and Output Impedance 207 --
4. 6. three Small-Signal present achieve 209 --
4. 7 Common-Base Amplifier 214 --
4. 7. 1 Small-Signal Voltage and present earnings 214 --
4. 7. 2 enter and Output Impedance 216 --
4. eight the 3 uncomplicated Amplifiers: precis and comparability 218 --
4. nine Multistage Amplifiers 219 --
4. nine. 1 Multistage research: Cascade Configuration 219 --
4. nine. 2 Cascode Configuration 223 --
4. 10 energy issues 226 --
Chapter five The Field-Effect Transistor 243 --
5. 1 MOS Field-Effect Transistor 243 --
5. 1. 1 Two-Terminal MOS constitution 244 --
5. 1. 2 n-Channel Enhancement-Mode MOSFET 246 --
5. 1. three perfect MOSFET Current-Voltage features 248 --
5. 1. four Circuit Symbols and Conventions 253 --
5. 1. five extra MOSFET constructions and Circuit Symbols 253 --
5. 1. 6 precis of Transistor Operation 258 --
5. 1. 7 Nonideal Current-Voltage features 259 --
5. 2 MOSFET DC Circuit research 262 --
5. 2. 1 Common-Source Circuit 263 --
5. 2. 2 Load Line and Modes of Operation 267 --
Problem-Solving strategy: MOSFET DC research 268 --
5. 2. three universal MOSFET Configurations: DC research 269 --
5. 2. four Constant-Current resource Biasing 281 --
5. three simple MOSFET functions: swap, electronic common sense Gate, and Amplifier 283 --
5. three. 1 NMOS Inverter 283 --
5. three. 2 electronic good judgment Gate 285 --
5. three. three MOSFET Small-Signal Amplifier 287 --
5. four Junction Field-Effect Transistor 287 --
5. four. 1 pn JFET and MESFET Operation 288 --
5. four. 2 Current-Voltage features 292 --
5. four. three universal JFET Configurations: DC research 295 --
Chapter 6 easy FET Amplifiers 313 --
6. 1 The MOSFET Amplifier 313 --
6. 1. 1 Graphical research, Load traces, and Small-Signal Parameters 314 --
6. 1. 2 Small-Signal identical Circuit 318 --
Problem-Solving procedure: MOSFET AC research 320 --
6. 1. three Modeling the physique influence 322 --
6. 2 easy Transistor Amplifier Configurations 323 --
6. three The Common-Source Amplifier 324 --
6. three. 1 A uncomplicated Common-Source Configuration 324 --
6. three. 2 Common-Source Amplifier with resource Resistor 329 --
6. three. three Common-Source Circuit with resource skip Capacitor 331 --
6. four The Source-Follower Amplifier 334 --
6. four. 1 Small-Signal Voltage achieve 334 --
6. four. 2 enter and Output Impedance 339 --
6. five The Common-Gate Configuration 341 --
6. five. 1 Small-Signal Voltage and present profits 341 --
6. five. 2 enter and Output Impedance 343 --
6. 6 the 3 uncomplicated Amplifier Configurations: precis and comparability 345 --
6. 7 Single-Stage built-in Circuit MOSFET Amplifiers 345 --
6. 7. 1 NMOS Amplifier with Enhancement Load 345 --
6. 7. 2 NMOS Amplifier with Depletion Load 350 --
6. 7. three NMOS Amplifier with PMOS Load 353 --
6. eight Multistage Amplifiers 355 --
6. eight. 1 DC research 356 --
6. eight. 2 Small-Signal research 360 --
6. nine uncomplicated JFET Amplifiers 362 --
6. nine. 1 Small-Signal identical Circuit 362 --
6. nine. 2 Small-Signal research 364 --
Chapter 7 Frequency reaction 383 --
7. 1 Amplifier Frequency reaction 384 --
7. 1. 1 an identical Circuits 384 --
7. 1. 2 Frequency reaction research 385 --
7. 2 procedure move services 386 --
7. 2. 1 s-Domain research 386 --
7. 2. 2 First-Order capabilities 388 --
7. 2. three Bode Plots 388 --
7. 2. four Short-Circuit and Open-Circuit Time Constants 394 --
7. three Frequency reaction: Transistor Amplifiers with Circuit Capacitors 398 --
7. three. 1 Coupling Capacitor results 398 --
Problem-Solving approach: Bode Plot of achieve significance 404 --
7. three. 2 Load Capacitor results 405 --
7. three. three Coupling and cargo Capacitors 407 --
7. three. four pass Capacitor results 410 --
7. three. five mixed results: Coupling and skip Capacitors 414 --
7. four Frequency reaction: Bipolar Transistor 416 --
7. four. 1 extended Hybrid-[pi] identical Circuit 416 --
7. four. 2 Short-Circuit present achieve 418 --
7. four. three Cutoff Frequency 420 --
7. four. four Miller influence and Miller Capacitance 422 --
7. five Frequency reaction: The FET 426 --
7. five. 1 High-Frequency identical Circuit 426 --
7. five. 2 Unity-Gain Bandwidth 428 --
7. five. three Miller impact and Miller Capacitance 431 --
7. 6 High-Frequency reaction of Transistor Circuits 433 --
7. 6. 1 Common-Emitter and Common-Source Circuits 433 --
7. 6. 2 Common-Base, Common-Gate, and Cascode Circuits 436 --
7. 6. three Emitter- and Source-Follower Circuits 444 --
7. 6. four High-Frequency Amplifier layout 448 --
Chapter eight Output levels and tool Amplifiers 469 --
8. 1 energy Amplifiers 469 --
8. 2 energy Transistors 470 --
8. 2. 1 energy BJTs 470 --
8. 2. 2 energy MOSFETs 474 --
8. 2. three warmth Sinks 477 --
8. three periods of Amplifiers 480 --
8. three. 1 Class-A Operation 481 --
8. three. 2 Class-B Operation 484 --
8. three. three Class-AB Operation 489 --
8. three. four Class-C Operation 493 --
8. four Class-A energy Amplifiers 494 --
8. four. 1 Inductively Coupled Amplifier 494 --
8. four. 2 Transformer-Coupled Common-Emitter Amplifier 495 --
8. four. three Transformer-Coupled Emitter-Follower Amplifier 497 --
8. five Class-AB Push-Pull Complementary Output levels 499 --
8. five. 1 Class-AB Output degree with Diode Biasing 499 --
8. five. 2 Class-AB Biasing utilizing the V[subscript BE] Multiplier 501 --
8. five. three Class-AB Output degree with enter Buffer Transistors 504 --
8. five. four Class-AB Output level using the Darlington Configuration 507 --
Part II Analog Electronics 519 --
Chapter nine the precise Operational Amplifier 521 --
9. 1 The Operational Amplifier 521 --
9. 1. 1 excellent Parameters 522 --
9. 1. 2 improvement of the perfect Parameters 523 --
9. 1. three research procedure 525 --
9. 1. four PSpice Modeling 526 --
9. 2 Inverting Amplifier 526 --
9. 2. 1 uncomplicated Amplifier 527 --
Problem-Solving strategy: perfect Op-Amp Circuits 529 --
9. 2. 2 Amplifier with a T-Network 530 --
9. 2. three impact of Finite achieve 532 --
9. three Summing Amplifier 534 --
9. four Noninverting Amplifier 536 --
9. four. 1 easy Amplifier 536 --
9. four. 2 Voltage Follower 537

Extra info for American microelectronics data annual. 1964-65

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For example, a General Ceramics CF- 1 0 1 core of T- 1 type material 45 (Continued) need openings for wire interconnections. Five sided boxes usually give sufficient shielding. transistors. The two transistors supply the negative current pulse to the diode transformer matrix. T H E TRA N S FO R M E R - D I O D E MATRIX Fig. 1 7. Word Current Driver. The C u rrent Switc h For BI P -1 001 -= Fig. 1 8 . Word Current Switch. IWITCMU Fig. 16. Transformer-Diode Matrix. A small matrix is shown in Figure 1 6 .

A final formation of To complete thin film circuits at present, planar transistors are manufactured The circuit is then completed with the deposition of an independently inert passivated layer over the thin film components. and affixed mechanically to the substrates. This com­ ponent-oriented approach (thin film circuit) has been and will be available. However, greater momentum is being extended toward the second approach, namely, the silicon all diffused monolithic circuit. In this ap­ steps of Fabrication: proach circuit elements are inseparately associated within a continuous body of silicon to perform the 1.

20/0 . Because advanced techniques are also available fo r frame mounting, heat dissipation , inte rconnection s into functional module s , and envi ronmental coating protection , a complete capability from c i rcuit layout to final product is offered . :25 -250 to 0 - 500 to - 50 -to . 01 ±0 . 1 ±0 . 25 square ) 25 to 500 100 to 10 , 000 Mate rial Capac itance* mi c rofarad� ( /square inch) Al-SiO -Al O . Ol4 to (O Di s sipation Factor ( 0 /o) Tolerance ( 0 /o) + 1 o . 44 * The uppe r limit refers to a 5 -laye r parallel stacked unit .

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