Active Antennas and Quasi-Optical Arrays by Amir Mortazwi, Tatsuo Itoh, James Harvey

By Amir Mortazwi, Tatsuo Itoh, James Harvey

"Whether communications, radar, transportation, or security drives your curiosity in solid-state units at microwave and millimeter-wave frequencies, this prepared reference ebook offers you an invaluable evaluation of quasi-optical strength combining and energetic built-in antennas. delivered to you in a single handy quantity are key reprinted papers from best specialists in microwave know-how. Their helpful views variety from the most up-tp-date advances to historic advancements. integrated as a distinct function is an invited paper, never-before-published, which offers an outline of quasi-optical energy combining by way of famous authority J.W. Mink and co-workers. you'll find different precious highlighted themes such as:* Transmitting and receiving energetic antennas* Spatial energy combining oscillators* Spatial combining amplifiers* Beam keep watch over* lively built-in antennas and quasi-optical structures* research and CAD* rising technologies-two dimensional quasi-optics"Sponsored by:IEEE Microwave concept and methods Society.

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29] W. W. , "Millimeter-wave diode-grid phase shifters," IEEE Trans. , vol. 36, pp. 902-907, May 1988. [30] C. F. , "Millimeter-wave diode-grid frequency doubler," IEEE Trans. , vol. 36, pp. 1507-1514, Nov. 1988. [31] Z. B. Popovic, M. Kim, and D. B. Rutledge, "Grid oscillators," Int. J. Infrared and Millimeter Waves, vol. 9, no. 7, pp. 647-654, 1988. [32] Z. B. Popovic, R. M. Weikle, II, M. Kim, K. A. Potter, and D. B. Rutledge, "Bar-grid oscillators," IEEE Trans. , vol. 38, pp. 225-230, Mar.

A de bias , which is applied to lines running horizontally across the back of the substrate, is fed to the MESFET's through via holes. J -90 -30 0 30 Angle. Degrees - 60 60 90 (b) Fig. 14. Measured far-field radiation patterns for the X-band grid in (a) the H plane (a) and (b) the E plane. The cross-polarized patterns are shown with dashed lines [37]. To eliminate spurious oscillations, l-kn carbon resistors are placed between the bias lines and the MESFET gates. Additional 120-n resistors connect the source leads to de ground.

B. , pp. 91-107, 1990 (State of the Art Reference). [10] E. R. Brown, T. C. L. G. Sollner, C. D. Parker, W. D. Goodhue, and C. L. Chen, " Oscillations up to 420 GHz in GaAs/AlAs resonant-tunneling diodes," Appl. Phys. , vol. 49, pp. 1777-1779, Oct. 1989. P Benz and C. 1. Burroughs, "Coherent emission from twodimensional Josephson junction arrays," Appl. Phys. , vol. 58, pp. 2162-2164, May 1991. [12] M. Y. , vol. 10, pp. 580-582, Dec. 1989. [13] C. A. Liechti, "High-speed transistors: Directions for the 1990's," Microwave J.

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